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FK8V03030L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-channel MOSFET - Panasonic

भाग संख्या FK8V03030L
समारोह Silicon N-channel MOSFET
मैन्युफैक्चरर्स Panasonic 
लोगो Panasonic लोगो 
पूर्व दर्शन
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<?=FK8V03030L?> डेटा पत्रक पीडीएफ

FK8V03030L pdf
DReovcisNoni. . oT2 T -E4 -A1 3 9 8 1
Product Standards
MOS FET
FK8V03030L
Electrical Characteristics Ta = 25C 3C
Static Characteristics
Parameter
Symbol
Conditions
Drain-source Breakdown Voltage
VDSS ID = 1 mA, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS VDS = 33 V, VGS = 0 V
Gate-source Leakage Current
IGSS VGS = 16 V, VDS = 0 V
Gate-source Threshold Voltage
Vth ID = 1.73 mA, VDS = 10 V
Drain-source On-state Resistance *1
RDS(on)1 ID = 6 A, VGS = 10 V
RDS(on)2 ID = 6 A, VGS = 4.5 V
Min Typ Max
33
10
10
1 2.5
57
8 13
Unit
V
A
A
V
m
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time *2
Rise Time *2
Turn-off Delay Time *2
Fall Time *2
Total Gate Charge
Gate-source Charge
Gate-drain Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS = 10 V, VGS = 0 V
f = 1 MHz
VDD = 15 V, VGS = 0 to 10 V
ID = 6 A
VDD = 15 V, VGS = 10 to 0 V
ID = 6 A
VDD = 15 V, VGS = 0 to 4.5 V,
ID = 12 A
1100
250
150
12
7
61
38
10.2
3.1
4.7
pF
ns
nC
Body Diode Characteristic
Diode Forward Voltage *1
VSD IS = 6 A, VGS = 0 V
0.8 1.2
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test: Ensure that the channel temperature does not exceed 150C.
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Establ shied : 2 0 -11 -311 0
Revised : 2 0 -01 -373 1
Page 2 of 6

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