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FK8V0304 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-channel MOS FET - Panasonic

भाग संख्या FK8V0304
समारोह Silicon N-channel MOS FET
मैन्युफैक्चरर्स Panasonic 
लोगो Panasonic लोगो 
पूर्व दर्शन
1 Page
		
<?=FK8V0304?> डेटा पत्रक पीडीएफ

FK8V0304 pdf
FK8V0304
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source surrender voltage
VDSS ID = 1 mA, VGS = 0 V
33
Drain-source cutoff current
IDSS VDS = 33 V, VGS = 0 V
10
Gate-source cutoff current
IGSS VGS = ±16 V, VDS = 0 V
±10
Gate threshold voltage
VTH ID = 1.12 mA, VDS = 10 V
1 2.5
Drain-source ON resistance *1
RDS(on)
ID = 5 A, VGS = 10 V
ID = 5 A, VGS = 4.5 V
7 10
11 19
Short-circuit input capacitance (Common source) Ciss
750
Short-circuit output capacitance (Common source) Coss VDS = 10 V, VGS = 0 V, f = 1 MHz
170
Reverse transfer capacitance (Common source)
Turn-on delay time *2
Rise time *2
Turn-off delay time *2
Fall time *2
Crss
td(on)
tr
td(off)
tf
VDD = 15 V, VGS = 0 V to 10 V,
ID = 5 A
VDD = 15 V, VGS = 10 V to 0 V,
ID = 5 A
100
9
6
46
18
Gate charge load
Gate-source charge
Gate-drain charge
Qg
Qgs
VDD = 15 V, VGS = 0 V to 4.5 V,
ID = 10 A
Qgd
7.2
2.3
3.3
Body diode characteristics
Drain-source voltage *1
VSD IS = 5 A, VGS = 0 V
0.8 1.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement: Channel temperature not to exceed 150°C
*2: Measurement circuit
VIN
10 V
0V
PW = 10 µs
Duty Cycle 1%
VIN
50
G
VDD = 15 V
ID = 5 A
D VOUT
S
VIN
VOUT
90%
10%
90%
10%
td(on) tr
td(off) tf
Unit
V
mA
mA
V
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
2 Ver. AED

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डाउनलोड[ FK8V0304 Datasheet.PDF ]


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