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MJE13002 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Power Transistors - SEMTECH

भाग संख्या MJE13002
समारोह NPN Silicon Power Transistors
मैन्युफैक्चरर्स SEMTECH 
लोगो SEMTECH लोगो 
पूर्व दर्शन
1 Page
		
<?=MJE13002?> डेटा पत्रक पीडीएफ

MJE13002 pdf
MJE13002 / MJE13003
Characteristics at Ta=25 OC
DC Current Gain
at VCE=2Vdc, IC=0.5Adc
at VCE=2Vdc, IC=1Adc
Collector Emitter Sustaining Voltage
at IC=10mA
at IC=10mA
MJE13002
MJE13003
Collector Cutoff Current
at VCEV=Rated Value, VBE(off)=1.5Vdc
at VCEV=Rated Value, VBE(off)=1.5Vdc,TC=100oC
Emitter Cutoff Current
at VEB=9Vdc
Collector Emitter Saturation Voltage
at IC=0.5Adc, IB=0.1Adc
at IC=1Adc, IB=0.25Adc
at IC=1.5Adc, IB=0.5Adc
at IC=1Adc, IB=0.25Adc, TC=100oC
Base Emitter Saturation Voltage
at IC=0.5Adc, IB=0.1Adc
at IC=1Adc, IB=0.25Adc
at IC=1Adc, IB=0.25Adc, TC=100oC
Current Gain Bandwidth Product
at VCE=10Vdc, IC=100mAdc,f=1MHz
Output Capacitance
at VCB=10Vdc, f=0.1MHz
Delay Time
Rise Time
Storage Time
Fall Time
(VCC=125Vdc,IC=1A,
IB1=IB2=0.2A,tp=25µs,
Duty Cycle1%)
Storage Time
Crossover Time
Fall Time
(IC=1A,Vclamp=300Vdc,
IB1=0.2A,VBE(off)=5Vdc,
TC=100oC)
Symbol
hFE
hFE
VCEO(sus)
VCEO(sus)
ICEV
ICEV
IEBO
VCE(sat)
VCE(sat)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(sat)
fT
Cob
td
tr
ts
tf
tsv
tc
tfi
1) Pulse Test: Pulse Width=300µs, Duty Cycle2%.
Min.
8
5
300
400
-
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
21
0.05
0.5
2
0.4
1.7
0.29
0.15
Max.
40
25
-
-
1
5
1
0.5
1
3
1
1
1.2
1.1
-
-
0.1
1
4
0.7
4
0.75
-
Unit
-
-
Vdc
Vdc
mAdc
mAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
MHz
pF
µs
µs
µs
µs
µs
µs
µs
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
® listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002

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डाउनलोड[ MJE13002 Datasheet.PDF ]


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