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K03H1202 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - Infineon

भाग संख्या K03H1202
समारोह IGBT
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
1 Page
		
<?=K03H1202?> डेटा पत्रक पीडीएफ

K03H1202 pdf
IKA03N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction - case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
4.3
5.8
62
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V, IC=300A
VGE = 15V, IC=3A
Tj=25C
Tj=150C
VGE = 10V, IC=3A,
Tj=25C
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
VF
VGE(th)
ICES
IGES
gfs
VGE = 0, IF=3A
Tj=25C
Tj=150C
IC=90A,VCE=VGE
VCE=1200V,VGE=0V
Tj=25C
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=3A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=3A
VGE=15V
min.
1200
-
-
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
1.55 -
1.6 -
3 3.9
A
- 20
- 80
- 100 nA
2 -S
205 - pF
24 -
7-
8.6 - nC
7 - nH
Power Semiconductors
2
Rev. 2.3 17.07.2013

विन्यास 14 पेज
डाउनलोड[ K03H1202 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
K03H1202IGBTInfineon
Infineon


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