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SD1500C30L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Standard Recovery Diodes - Vishay

भाग संख्या SD1500C30L
समारोह Standard Recovery Diodes
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=SD1500C30L?> डेटा पत्रक पीडीएफ

SD1500C30L pdf
SD1500C..L Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version),
1600 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one cycle,
non-repetitive surge current
Maximum I2t for fusing
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
SYMBOL
IF(AV)
IF(RMS)
IFSM
I2t
I2t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
VALUES
180° conduction, half sine wave
Double side (single side) cooled
1600 (820)
55 (85)
25 °C heatsink temperature double side cooled
3010
t = 10 ms No voltage
t = 8.3 ms reapplied
16 600
17 400
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
14 000
14 700
1386
1265
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
980
895
t = 0.1 to 10 ms, no voltage reapplied
13 860
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
Ipk = 3000 A TJ = TJ maximum,
tp = 10 ms sinusoidal wave
0.83
0.95
0.27
0.25
1.64
UNITS
A
°C
A
kA2s
kA2s
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating temperature range
Maximum storage temperature range
TJ
TStg
Maximum thermal resistance,
junction to heatsink
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
- 40 to 180
- 55 to 200
°C
0.073
0.031
K/W
14 700
(1500)
N
(kg)
255 g
DO-200AB (B-PUK)
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
180°
0.009
0.009
0.006
0.006
120°
0.011
0.011
0.011
0.011
90°
0.014
0.014
0.015
0.015
TJ = TJ maximum
60°
0.020
0.020
0.021
0.021
30°
0.035
0.035
0.036
0.036
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
UNITS
K/W
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93537
Revision: 25-Jul-08

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SD1500C30LStandard Recovery DiodesVishay
Vishay


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