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VIT3060G-E3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual High Voltage Trench MOS Barrier Schottky Rectifier - Vishay

भाग संख्या VIT3060G-E3
समारोह Dual High Voltage Trench MOS Barrier Schottky Rectifier
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VIT3060G-E3?> डेटा पत्रक पीडीएफ

VIT3060G-E3 pdf
VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode (1)
IR = 1.0 mA
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
Reverse current per diode (2)
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF
IR
60 (min.)
0.49
0.53
0.65
0.40
0.46
0.61
-
14
MAX.
-
-
-
0.73
-
-
0.69
850
40
UNIT
V
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT3060G
VFT3060G
Typical thermal resistance
per diode
per device
RJC
3.2
1.9
6.2
5.0
VBT3060G
3.2
1.9
VIT3060G
3.2
1.9
UNIT
°C/W
ORDERING INFORMATION (EXAMPLE)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT3060G-E3/4W
1.88
ITO-220AB
VFT3060G-E3/4W
1.76
TO-263AB
VBT3060G-E3/4W
1.39
TO-263AB
VBT3060G-E3/8W
1.39
TO-262AA
VIT3060G-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Revision: 15-Dec-16
2 Document Number: 89135
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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