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VIT2060G-E3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual High Voltage Trench MOS Barrier Schottky Rectifier - Vishay

भाग संख्या VIT2060G-E3
समारोह Dual High Voltage Trench MOS Barrier Schottky Rectifier
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VIT2060G-E3?> डेटा पत्रक पीडीएफ

VIT2060G-E3 pdf
VT2060G-E3, VFT2060G-E3, VBT2060G-E3, VIT2060G-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode (1)
IR = 1.0 mA
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current per diode (2)
VR = 60 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF
IR
60 (min.)
0.58
0.69
0.50
0.63
-
8.0
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
0.90
-
0.84
700
25
UNIT
V
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT2060G
VFT2060G
Typical thermal resistance
per diode
per device
RJC
3.6
2.6
7.0
5.2
VBT2060G
3.6
2.6
VIT2060G
3.6
2.6
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT2060G-E3/4W
1.87
ITO-220AB
VFT2060G-E3/4W
1.75
TO-263AB
VBT2060G-E3/4W
1.39
TO-263AB
VBT2060G-E3/8W
1.39
TO-262AA
VIT2060G-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Revision: 15-Dec-16
2 Document Number: 89133
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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डाउनलोड[ VIT2060G-E3 Datasheet.PDF ]


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