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V20M100M-E3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual High Voltage Trench MOS Barrier Schottky Rectifier - Vishay

भाग संख्या V20M100M-E3
समारोह Dual High Voltage Trench MOS Barrier Schottky Rectifier
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=V20M100M-E3?> डेटा पत्रक पीडीएफ

V20M100M-E3 pdf
www.vishay.com
V20M100M-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current per diode
VR = 70 V
VR = 100 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.65
0.83
0.57
0.67
1.5
0.8
-
1.5
MAX.
-
1.02
-
0.75
-
-
500
10
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20M100M
Typical thermal resistance
per diode
per device
RJC
2.8
1.4
per device
RJA (1)(2)
40
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient dPD/dTJ < 1/RJA
(2) Free air, without heatsink
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20M100M-E3/4W
1.88
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
Revision: 11-May-16
2 Document Number: 89985
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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डाउनलोड[ V20M100M-E3 Datasheet.PDF ]


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