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2SC1675 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Epitaxial Planar Transistor - CHINA BASE

भाग संख्या 2SC1675
समारोह NPN Silicon Epitaxial Planar Transistor
मैन्युफैक्चरर्स CHINA BASE 
लोगो CHINA BASE लोगो 
पूर्व दर्शन
1 Page
		
<?=2SC1675?> डेटा पत्रक पीडीएफ

2SC1675 pdf
Characteristics at Ta=25 OC
Parameter
DC Current Gain
at VCE=6V, IC=1mA
Collector-Emitter Saturation Voltage
at IC=10mA, IB=1mA
Base–Emitter On Voltage
at VCE=6V, IC=1mA
Collector-Base Breakdown Voltage
at IC=10μA, IE=0
Collector-Emitter Breakdown Voltage
at IC=5mA, IB=0
Emitter-Base Breakdown Voltage
at IE=10μA, IC=0
Collector Cut-off Current
at VCB=50V, IE=0
Emitter Cut-off Current
at VEB=5V, IC=0
Current Gain Bandwidth Product
at VCE=6V,IC=1mA
Output Capacitance
at VCB=6V, IE=0, f=1MHz
R
O
Y
Symbol
hFE
hFE
hFE
Min.
40
70
120
VCE(sat)
VBE(on)
BVCBO
BVCEO
BVEBO
ICBO
IEBO
fT
Cob
-
-
50
30
5
-
-
150
-
Typ.
-
-
-
0.08
0.67
-
-
-
-
-
300
2.0
Max.
80
140
240
0.3
0.75
-
-
-
0.1
0.1
-
2.5
Unit
-
-
-
V
V
V
V
V
μA
μA
MHz
pF
Page 2 of 3
7/15/2011

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डाउनलोड[ 2SC1675 Datasheet.PDF ]


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