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KTA1666 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Silicon Epitaxial Planar Transistor - GME

भाग संख्या KTA1666
समारोह PNP Silicon Epitaxial Planar Transistor
मैन्युफैक्चरर्स GME 
लोगो GME लोगो 
पूर्व दर्शन
1 Page
		
<?=KTA1666?> डेटा पत्रक पीडीएफ

KTA1666 pdf
Production specification
PNP Silicon Epitaxial Planar Transistor
KTA1666
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=-1mA,IE=0
IC=-10mA,IB=0
IE=-1mA,IC=0
-50
-50
-5
Collector cut-off current
Emitter cut-off current
ICBO
IEBO
VCB=-50V,IE=0
VEB=-5V,IC=0
-0.1
-0.1
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
VCE=-2V,IC=-500mA
VCE=-2V,IC=-1.5A
IC=-1A, IB= -50mA
IC=-1A, IB= -50mA
70
40
240
-0.5
-1.2
Transition frequency
fT VCE=-2V, IC= -0.5A
120
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
40
UNIT
V
V
V
μA
μA
V
V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
O
Range
70-140
MARKING
WO
Y
120-240
WY
E001
Rev.A
www.gmicroelec.com
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डाउनलोड[ KTA1666 Datasheet.PDF ]


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