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2SA1213 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Plastic-Encapsulate Transistors - WILLAS

भाग संख्या 2SA1213
समारोह Plastic-Encapsulate Transistors
मैन्युफैक्चरर्स WILLAS 
लोगो WILLAS लोगो 
पूर्व दर्शन
1 Page
		
<?=2SA1213?> डेटा पत्रक पीडीएफ

2SA1213 pdf
WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SA1213 THRU
FM1200-M+
Pb Free Product
Featur-1000 es
Static Characteristic
Batch process design, excellent pow-e6mrAdissipaCEtOMioMITMnTOEoRNffers
better
reverse
leakage
current
and
the-5r.4mmAal
r e sT i=s2t5an c e .
a
Low pr-8o00file surface mounted applicatio-n4.8imnAorder to
optimize board space.
-4.2mA
Low power loss, high efficiency.
-3.6mA
-600
High current capability, low forward voltage-3mdArop.
High surge capability.
Guard-r40in0 g for overvoltage protection.
Ultra high-speed switching.
-2.4mA
-1.8mA
Silicon-20e0 pitaxial planar chip, metal silicon junc-t1i.o2mnA.
Lead-free parts meet environmental standards oI =f-600uA
MIL-STD-19500 /228
B
RoHS pr-0o-0d.0uct fo-0r.5pack-i1n.0g cod-1e.5 suffix-2."0G" -2.5 -3.0 -3.5
Halogen free prodCuOcLtLfEoCrTOpRa-cEkMiInTTgERcoVOdLeTAsGuEffixVC"EH"(V)
Mechanical dataVBEsat —— IC
-1000
Epoxy : UL94-V0
rated
flame
retardant
Package outhFE line IC
1000
COMMON EMITTER
V =-2V
CE
SOD-123H
300 T =100
a
0.146(3.7)
T =25 0.130(3.3)
a
0.012(0.3) Typ.
100
0.071(1.8)
30 0.056(1.4)
10
-1
-1000
-3
-10 -30
-100
-500 -1000 -2000
COLLECTOR CURRENT I (mA)
C
VCEsat —— IC
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOTD=2-5123H
Terminals
:Plated
a
terminals,
solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
-300
0.031(0.8) Typ.
Method 2026
T =100
a
Polarity : Indicated by cathode band
Mounting Position : Any
Dimensions in inches and (millimeters)
-100
Weight : Approximated 0.011 gram
T =100
a
-30
T =25
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS a
Ratings at 25℃ ambient temperature unless otherwise specifieβ=d2.0
-200
Single phase half w-1 ave, 6-03 Hz, res-i1s0tive of-3i0nductiv-1e00load. -300
-1000
-10
-1
-3
β=20
-10
-30
-100
-300
-1000
  For capacitive load, derate currCeOnLtLEbCyTO2R0%CURRENT
I
C
(mA)
COLLECTOR CURRENT I (mA)
C
-1000 RATINGS
IC —— VBE SYMBOL FM120-MH FM130-MH100F0M140-MH FM150C-MobH/CFibM160-MHVFCMB/V18EB0-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurr-e30n0t Peak Reverse Voltage
12 13
14 15
16
VRRM
20
30
40
50
60
18
1f=01MHz
115
120
I =0/I =0
80
1T0E =025C
150
200 Volts
a
Maximum RMS Voltage
VRMS
14
21 300 28
35
42
56 70
105 140 Volts
Maximum DC Blo-c10k0ing Voltage
VDC 20 30
40 50
60
C
80
100
150 200 Volts
T =100
ib
Maximum Average Forward Rectified Curraent
-30
IO
100
1.0
Amps
  
T = 25
 
Peak Forward Surge Current 8.3 ms single half sine-wave
-10
a
IFSM
Co3b 0
Amps
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
-3
Typical Junction Capacitance (Note 1)
RΘJA
CJ
  30
 
40  
120  
℃/W
PF
Operating Tempera-1ture Range
TJ
-0.0 -0.2 -0.4 -0.6 -0.8
Storage Temperature Range
 
BASE-EMITTER VOLTAGE V TS(VT)G
BE
V =-2V
CE
-1.0
-55 to +12150
-0.1
  -55 to +150
-0.3 -1 -3 -10 -20
REVE-R6SE5 tVoO+LT1A7G5E V (V)
600CHARACTERISTICPSC —— Ta
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9 0.92 Volts
Maximum Average500Reverse Current at @T A=25℃
Rated DC Blocking Voltage
  400
@T A=125℃
IR
0.5  
mAmps
10
NOTES:
1- Measured at 1 M3H00Z and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
  200
 
100
0
0
2012-06
2012-0
25 50 75 100 125
AMBIENT TEMPERATURE T ()
a
150
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.

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डाउनलोड[ 2SA1213 Datasheet.PDF ]


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