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K0560QE600 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Medium Voltage Thyristor - IXYS

भाग संख्या K0560QE600
समारोह Medium Voltage Thyristor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=K0560QE600?> डेटा पत्रक पीडीएफ

K0560QE600 pdf
Characteristics
Medium Voltage Thyristor Types K0560QE600 and K0560QE650
PARAMETER
VTM Maximum peak on-state voltage
V0 Threshold voltage
rT Slope resistance
dv/dt Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered Charge
Qra Recovered Charge, 50% chord
Irm Reverse recovery current
trr Reverse recovery time, 50% chord
tq Turn-off time
RthJK
Thermal resistance, junction to
heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
650
1000
-
-
-
16
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
-
-
-
-
-
-
-
-
-
0.5
1.5
4750
1550
115
27
-
-
-
-
-
-
420
3.20 ITM=1000A
1.46
1.75
- VD=80% VDRM, Linear ramp, gate o/c
150 Rated VDRM
150 Rated VRRM
3.0
Tj=25°C, VD=10V, IT=3A
300
1000 Tj=25°C
1.6 IFG=2A, tr=0.5µs, VD=67%VDRM,
5.0 ITM=1000A, di/dt=10A/µs, Tj=25°C
5000
- ITM=1000A, tp=1000µs, di/dt=10A/µs,
125 Vr=100V
-
850
1100
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=20V/µs
(Note 2)
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=80%VDRM, dVdr/dt=200V/µs
(Note 2)
0.0310 Double side cooled
0.0687 Cathode side cooled
0.0579 Anode side cooled
20 (Note 3)
-
V
V
m
V/s
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
kN
kg
Notes: -
1) Unless otherwise stated Tj=125°C.
2) Standard test condition for tq dVdr/dt=20V/µs. For other dVdr/dt values please consult factory.
3) For other clamp forces please consult factory.
Data Sheet. Types K0560QE600 and K0560QE650 Issue P1.
Page 2 of 10
May, 2016

विन्यास 10 पेज
डाउनलोड[ K0560QE600 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
K0560QE600Medium Voltage ThyristorIXYS
IXYS


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