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DGS9-025AS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Gallium Arsenide Schottky Rectifier - IXYS

भाग संख्या DGS9-025AS
समारोह Gallium Arsenide Schottky Rectifier
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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DGS9-025AS pdf
DGS 9-025AS DGS 10-025A(S)
DGSK 20-025A(S)
20
10
A
IF
1
200
pF
100
CJ
0,1
TVJ =
125°C
25°C
0,01
0,0 0,5 1,0 1,5 V 2,0
VF
Fig. 1 typ. forward characteristics
10
0,1
TVJ = 125°C
1 10 100 V 1000
VR
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
ZthJC
0,1
TO-252
Single Pulse
TO-220
0,01
0,00001
0,0001
0,001
0,01
Fig. 3 typ. thermal impedance junction to case
0,1
DGS10-022/025A
1s
t
10
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to VFR
GaAs Schottky Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DGS9-025ASGallium Arsenide Schottky RectifierIXYS
IXYS


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