DataSheet.in

R3636EC20P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Distributed Gate Thyristor - IXYS

भाग संख्या R3636EC20P
समारोह Distributed Gate Thyristor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=R3636EC20P?> डेटा पत्रक पीडीएफ

R3636EC20P pdf
WESTCODE An IXYS Company
Characteristics
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
PARAMETER
VTM
VTM
V0
rS
dv/dt
IDRM
IRRM
VGT
IGT
VGD
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
tq Turn-off time
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
60
-
-
63
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
60
-
-
-
-
-
0.8
1.0
1750
750
220
7.5
-
-
-
-
-
1.23
1.95 ITM=5000A
2.86 ITM=10700A
1.173
0.155
- VD=80% VDRM, gate o/c, linear ramp
300 Rated VDRM
300 Rated VRRM
3.0
600 Tj=25°C
VD=10V, IT=3A
0.25 Rated VDRM
1000 Tj=25°C
1.5 VD=67% VDRM, IT=2000A, di/dt=60A/µs,
2.0 IFG=2A, tr=0.5µs, Tj=25°C
-
1500 ITM=4000A, tp=2000µs, di/dt=60A/µs,
- Vr=100V
-
140
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs
200
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs
0.0075 Double side cooled
0.0150 Single side cooled
77
-
UNITS
V
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 2 of 12
March, 2007

विन्यास 12 पेज
डाउनलोड[ R3636EC20P Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
R3636EC20KDistributed Gate ThyristorIXYS
IXYS
R3636EC20LDistributed Gate ThyristorIXYS
IXYS


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English