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R0964LS12E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power Thyristor - ETC

भाग संख्या R0964LS12E
समारोह Power Thyristor
मैन्युफैक्चरर्स ETC 
लोगो ETC लोगो 
पूर्व दर्शन
1 Page
		
<?=R0964LS12E?> डेटा पत्रक पीडीएफ

R0964LS12E pdf
Technical Data :
ELECTRICAL CHARACTERISTICS AND RATINGS
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol
PGM
PG(AV)
Min.
Max. Typ.
200
5
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
10
400
200
150
5
3
0.25
Peak negative voltage
VGRM
5
Page 2 of 3
R0964LS12E - Power Thyristor
Units
W
W
Conditions
tp = 40 us
A
mA
mA
mA
V
V
V
V
VD = 6 V;RL = 3 ohms;Tj = -40 oC
VD = 6 V;RL = 3 ohms;Tj = +25 oC
VD = 6 V;RL = 3 ohms;Tj = +125oC
VD = 6 V;RL = 3 ohms;Tj = -40 oC
VD = 6 V;RL = 3 ohms;Tj = 0-125oC
VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
Dynamic
Parameter
Delay time
Turn-off time (with VR = -50 V)
Reverse recovery charge
Symbol Min.
td
tq 20
Qrr
Max. Typ. Units Conditions
1.5 0.5 µs
30 µs
ITM = 500 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms;
tr = 0.1 µs; tp = 20 µs
ITM = 1000 A; di/dt = 60 A/µs;
VR -50 V; Re-applied dV/dt = 200
V/µs linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cPSTCle 0.01%
*180
µC ITM = 1000 A; di/dt = 60 A/µs;
VR -50 V
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Symbol
Tj
Tstg
Min.
-40
-40
Max.
+125
+150
Typ.
Units
oC
oC
Conditions
Thermal resistance - junction to
case
Thermal resistamce - case to sink
Mounting force
Weight
RΘ (j-c)
RΘ (c-s)
P
W
3000
13.3
0.040
0.080
0.015
0.030
3500
15.5
oC/W
oC/W
lb.
kN
Double sided cooled
Single sided cooled
Double sided cooled *
Single sided cooled *
270 g
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 4 of this Technical Data

विन्यास 3 पेज
डाउनलोड[ R0964LS12E Datasheet.PDF ]


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