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BCW29 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SILICON PLANAR EPITAXIAL TRANSISTORS - CDIL

भाग संख्या BCW29
समारोह SILICON PLANAR EPITAXIAL TRANSISTORS
मैन्युफैक्चरर्स CDIL 
लोगो CDIL लोगो 
पूर्व दर्शन
1 Page
		
<?=BCW29?> डेटा पत्रक पीडीएफ

BCW29 pdf
BCW29
BCW30
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
–VCB0
–VCES
–IC = 2 mA
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Storage temperature
°C
–VCE0
–VEB0
–IC
–ICM
Ptot
Tstg
Junction temperature
Tj
max.
max.
max.
max.
max.
max.
max.
max.
THERMAL RESISTANCE
From junction to ambient
Rth j–a =
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 32 V
IE = 0; –VCB = 32 V; Tj = 100 °C
Base–emitter voltage
–IC = 2 mA; –VCE = 5 V
Saturation voltages
–IC = 10 mA; –IB = 0,5 mA
–IC = 50 mA; –IB = 2,5 mA
–ICB0
–ICB0
<
<
–VBE
–VCEsat typ.
<
–VBEsat typ.
–VCEsat typ.
–VBEsat typ.
32 V
32 V
32 V
5V
100 mA
200 mA
250 mW
–55 to +150
150 ° C
500 K/W
100 nA
10 mA
600 to 750 mV
80 mV
300 mV
720 mV
150 mV
810 mV
D.C. current gain
–IC = 10 mA; –VCE = 5 V
–IC = 2 mA; –VCE = 5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; –VCB = 10 V
Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 5 V
Noise figure at RS = 2 kW
–IC = 200 mA; –VCE = 5 V
f = 1 KHz; B = 200 Hz
BCW 29
hFE typ. 90
> 120
< 260
30
150
215
500
Cc typ.
fT typ.
4,5 pF
150 MHz
F<
10 dB
Continental Device India Limited
Data Sheet
Page 2 of 3

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डाउनलोड[ BCW29 Datasheet.PDF ]


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