DataSheet.in

2N3027 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SILICON CONTROLLED RECTIFIERS - Digitron Semiconductors

भाग संख्या 2N3027
समारोह SILICON CONTROLLED RECTIFIERS
मैन्युफैक्चरर्स Digitron Semiconductors 
लोगो Digitron Semiconductors लोगो 
पूर्व दर्शन
1 Page
		
<?=2N3027?> डेटा पत्रक पीडीएफ

2N3027 pdf
2N3027-2N3032
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
Parameter
150°C Tests
High temperature off-state current
High temperature reverse current
High temperature gate trigger voltage
High temperature holding current
-65°C Tests
Low temperature gate trigger voltage
Low temperature gate trigger current
Low temperature holding current
Symbol
IDRM
IRRM
VGT
IH
VGT
IGT
IH
Min. Typ.
-
-
0.100
0.050
2
20
0.150
0.200
0.600
0
0.500
0.750
150
3.500
Max.
20
50
0.600
1.000
1.100
1.200
10
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3030-2N3032)
25°C tests
Off state current
IDRM
-
0.002
0.100
Reverse current
IRRM
-
0.002
0.100
Reverse gate voltage
VGR 5 8 -
Gate trigger current
IGT -5
20
Gate trigger voltage
VGT 0.440
0.600
On-state voltage
VT
0.800
1.200
1.500
Holding current
IH
0.300
1.000
4.000
Off-state voltage – critical rate of rise
dv/dt
30
15
10
60
30
25
-
-
-
Gate trigger-on pulse width
tpg(on)
-
0.050
0.100
Delay time
td - 0.100 -
Rise time
tr - 0.050 -
Circuit commutated turn-off time
tg
-
0.700
2.000
150°C Tests
High temperature off-state current
IDRM -
2 20
High temperature reverse current
IRRM -
20 50
High temperature gate trigger voltage
VGT
0.100
0.150
0.400
High temperature holding current
IH
0.050
0.300
2.000
-65°C Tests
Low temperature gate trigger voltage
VGT
0.440
0.800
0.950
Low temperature gate trigger current
IGT
0
0.400
0.500
Low temperature holding current
IH
0.500
5.000
8
Unit Test Condition
µA RGK = 1KΩ , VDRM = rating
µA RGK = 1KΩ, V RRM = rating
V RGS = 100Ω, VD = 5V
mA RGK = 1KΩ, VD = 5V
V RGS = 100Ω, VD = 5V
mA RGS = 10KΩ, VD = 5V
mA RGK = 1KΩ, VD = 5V
µA
µA
V
µA
V
V
mA
V/µs
µs
µs
µs
µs
RGK = 1KΩ, VDRM = rating
RGK = 1KΩ, VRRM = rating
IGR = 0.1mA
RGS = 10KΩ, VD = 5V
RGS = 100Ω, VD = 5V
IT = 1A (pulse test)
RGK = 1KΩ, VD = 5V
RGK = 1KΩ, VD = 30V (2N3030)
RGK = 1KΩ, VD = 60V (2N3031)
RGK = 1KΩ, VD = 100V (2N3032)
IG = 10mA, IT = 1A, VD = 30V
IG = 10mA, IT = 1A, VD = 30V
IG = 10mA, IT = 1A, VD = 30V
IT = 1A, IR = 1A, RGK = 1K
µA RGK = 1KΩ, VDRM = rating
µA RGK = 1KΩ, VRRM = rating
V RGS = 100Ω, VD = 5V
mA RGK = 1K, VD = 5V
V RGS = 100Ω, VD = 5V
mA RGS = 10KΩ, VD = 5V
mA RGK = 1KΩ, VD = 5V
Rev. 20150306

विन्यास 7 पेज
डाउनलोड[ 2N3027 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
2N3020NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHESMicro Electronics
Micro Electronics
2N3020GENERAL TRANSISTOR NPN SILICONBoca Semiconductor Corporation
Boca Semiconductor Corporation


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English