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C106B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Sensitive Gate Silicon Controlled Rectifiers - ON Semiconductor

भाग संख्या C106B
समारोह Sensitive Gate Silicon Controlled Rectifiers
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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<?=C106B?> डेटा पत्रक पीडीएफ

C106B pdf
C106 Series
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
3.0
°C/W
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
RθJA
TL
75
260
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms)
ON CHARACTERISTICS
TJ = 25°C
TJ = 110°C
IDRM, IRRM
– 10 µA
– 100 µA
Peak Forward On–State Voltage (Note 3)
(ITM = 4 A)
Gate Trigger Current (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 Ohms)
Peak Reverse Gate Voltage (IGR = 10 µA)
Gate Trigger Voltage (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 Ohms)
Gate Non–Trigger Voltage (Continuous dc) (Note 4)
(VAK = 12 V, RL = 100 Ohms, TJ = 110°C)
Latching Current
(VAK = 12 V, IG = 20 mA)
Holding Current (VD = 12 Vdc)
(Initiating Current = 20 mA, Gate Open)
DYNAMIC CHARACTERISTICS
TJ = 25°C
TJ = –40°C
TJ = 25°C
TJ = –40°C
TJ = 25°C
TJ = –40°C
TJ = 25°C
TJ = –40°C
TJ = +110°C
VTM
IGT
VGRM
VGT
VGD
IL
IH
– – 2.2 Volts
µA
– 15 200
– 35 500
– – 6.0 Volts
Volts
0.4 0.60 0.8
0.5 0.75 1.0
0.2 –
– Volts
mA
– 0.20 5.0
– 0.35 7.0
mA
– 0.19 3.0
– 0.33 6.0
– 0.07 2.0
Critical Rate–of–Rise of Off–State Voltage
(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
4. RGK is not included in measurement.
dv/dt
– 8.0 – V/µs
http://onsemi.com
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