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C106 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Sensitive Gate Silicon Controlled Rectifiers - ON Semiconductor

भाग संख्या C106
समारोह Sensitive Gate Silicon Controlled Rectifiers
मैन्युफैक्चरर्स ON Semiconductor 
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<?=C106?> डेटा पत्रक पीडीएफ

C106 pdf
C106 Series
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1 kW)
ON CHARACTERISTICS
TJ = 25°C
TJ = 110°C
Peak Forward OnState Voltage (Note 3)
(ITM = 4 A)
Gate Trigger Current (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 W)
Peak Reverse Gate Voltage (IGR = 10 mA)
Gate Trigger Voltage (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 W)
Gate NonTrigger Voltage (Continuous dc) (Note 4)
(VAK = 12 V, RL = 100 W, TJ = 110°C)
Latching Current
(VAK = 12 V, IG = 20 mA, RGK = 1 kW)
Holding Current (VD = 12 Vdc)
(Initiating Current = 20 mA, RGK = 1 kW)
TJ = 25°C
TJ = 40°C
TJ = 25°C
TJ = 40°C
TJ = 25°C
TJ = 40°C
TJ = 25°C
TJ = 40°C
TJ = +110°C
DYNAMIC CHARACTERISTICS
Critical RateofRise of OffState Voltage
(VAK = Rated VDRM, Exponential Waveform, RGK = 1 kW,
TJ = 110°C)
3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
4. RGK is not included in measurement.
Symbol
IDRM, IRRM
VTM
IGT
VGRM
VGT
VGD
IL
IH
dv/dt
Min
0.4
0.5
0.2
Max
3.0
75
260
Typ
15
35
0.60
0.75
0.20
0.35
0.19
0.33
0.07
8.0
Unit
°C/W
°C/W
°C
Max Unit
10 mA
100 mA
2.2 V
mA
200
500
6.0 V
V
0.8
1.0
V
mA
5.0
7.0
mA
3.0
6.0
2.0
V/ms
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