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2N3057A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - LOW POWER NPN SILICON TRANSISTOR - Microsemi

भाग संख्या 2N3057A
समारोह LOW POWER NPN SILICON TRANSISTOR
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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2N3057A pdf
2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCE = 90 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
IC = 1.0 Adc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 10 ms
Test 1
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
VCE = 10 Vdc
IC = 500 mAdc
IC = 180 mAdc
Test 2
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
VCE = 40 Vdc
IC = 125 mAdc
IC = 45 mAdc
Test 3
VCE = 80 Vdc
2N3019, 2N3019S
IC = 60 mAdc
2N3057A, 2N3700, 2N3700UB
IC = 22.5 mAdc
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
ICES
IEBO
Min. Max. Unit
10 ηAdc
10 ηAdc
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Cibo
100 300
50 200
90
50 200
15
0.2
0.5
1.1
Vdc
Vdc
80 400
5.0 20
12
60
pƒ
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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