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BC637 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Epitaxial Planar Transistor - SEMTECH

भाग संख्या BC637
समारोह NPN Silicon Epitaxial Planar Transistor
मैन्युफैक्चरर्स SEMTECH 
लोगो SEMTECH लोगो 
पूर्व दर्शन
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<?=BC637?> डेटा पत्रक पीडीएफ

BC637 pdf
ST BC635 / BC637 / BC639
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 2 V, IC = 5 mA
at VCE = 2 V, IC = 150 mA
at VCE = 2 V, IC = 500 mA
Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Voltage
at VCE = 2 V, IC = 500 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 50 mA, f = 100 MHz
Symbol
BC635
BC637 / BC639
hFE
hFE
hFE
hFE
ICBO
IEBO
BC635
BC637
BC639
V(BR)CBO
BC635
BC637
BC639
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE
fT
Min.
40
40
40
25
-
-
45
60
100
45
60
80
5
-
-
100
Max.
-
250
160
-
100
100
-
-
-
-
-
-
-
0.5
1
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2007

विन्यास 3 पेज
डाउनलोड[ BC637 Datasheet.PDF ]


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