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BF493S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage Transistor - ON Semiconductor

भाग संख्या BF493S
समारोह High Voltage Transistor
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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BF493S pdf
BF493S
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = −1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = −250 Vdc)
Emitter Cutoff Current
(VEB = −6.0 Vdc, IC = 0)
Collector Cutoff Current
(VCB = −250 Vdc, IE = 0, TA = 25°C)
(VCB = −250 Vdc, IE = 0, TA = 100°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
Collector −Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
Base −Emitter On Voltage
(IC = −20 mA, IB = −2.0 mA)
DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz)
Common−Emitter Feedback Capacitance
(VCB = −100 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Symbol
Min Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
IEBO
ICBO
−350
−350
−6.0
−10
0.1
− −0.005
− −1.0
Vdc
Vdc
Vdc
nAdc
mAdc
mAdc
hFE
VCE(sat)
VBE(sat)
25 −
40 −
−2.0
Vdc
−2.0
Vdc
fT 50 − MHz
Cre − 1.6 pF
150
100
70
50
30
20
15
−1.0
TJ = +125°C
+25°C
−55°C
VCE = −10 Vdc
−2.0 −3.0
−5.0 −7.0
−10
−20 −30 −50 −80 −100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
http://onsemi.com
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