DataSheet.in

WSB5510M डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Schottky Barrier Diode - WillSEMI

भाग संख्या WSB5510M
समारोह Schottky Barrier Diode
मैन्युफैक्चरर्स WillSEMI 
लोगो WillSEMI लोगो 
पूर्व दर्शन
1 Page
		
<?=WSB5510M?> डेटा पत्रक पीडीएफ

WSB5510M pdf
Absolute maximum ratings
Parameter
Symbol
Maximum Repetitive Peak Reverse Voltage
VRRM
Maximum RMS voltage
VRWS
Maximum DC blocking voltage
VDC
Maximum average forward rectified current at TL(Fig.2)
IF(AV)
Peak forward surge current 8.3ms single half-sine-wave IFSM
Operating temperature range
TJ
Storage temperature range
TSTG
Value
40
28
40
2.0
50
-55 ~ 125
-55 ~ 150
WSB5510M
Unit
V
V
V
A
A
oC
oC
Thermal Characteristics
Parameter
Maximum thermal resistance (Junction to Lead)(Fig.2)
Symbol
RθJL
Value
24
Electronics characteristics (TA=25oC)
Parameter
Maximum instantaneous forward voltage @IF=2.0A*
Maximum reverse current @ VDC (TJ=25oC)
Maximum reverse current @ VDC (TJ=100oC)
*: Pulse test, Pulse width 300us, duty cycle 1%
Symbol
VF
IR
IR
Value
0.50
0.4
10
Unit
oC/W
Unit
V
mA
mA
Will Semiconductor Ltd.
2 Feb, 2014 - Rev. 1.3

विन्यास 4 पेज
डाउनलोड[ WSB5510M Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
WSB5510MSchottky Barrier DiodeWillSEMI
WillSEMI


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English