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WSB20L100T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Schottky Barrier Diode - WillSEMI

भाग संख्या WSB20L100T
समारोह Schottky Barrier Diode
मैन्युफैक्चरर्स WillSEMI 
लोगो WillSEMI लोगो 
पूर्व दर्शन
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<?=WSB20L100T?> डेटा पत्रक पीडीएफ

WSB20L100T pdf
Electronics characteristics (Per diode, TA =25oC)
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Junction capacitance
Symbol
VR
VF
IR
CJ
Condition
IR=0.5mA
IF=10A
VR=100V
VR=25V, F=1MHz
Min.
100
-
-
Typical characteristics (Ta=25oC, unless otherwise noted)
WSB20L100T
Typ. Max.
0.6 0.7
11 100
180
Unit
V
V
uA
pF
10 0.01
1
0.1
0.01
-40oC
-25oC
25oC
85oC
125oC
150oC
1E-4
1E-6
-40OC
-25OC
25OC
85OC
125OC
150OC
1E-8
1E-3
0.0
0.2 0.4 0.6 0.8
Forward Voltage (V)
Forward voltage vs. Forward current
1.0
12
10
20 40 60 80
Reverse Voltage (V)
Reverse current vs. Reverse voltage
100
10000
f = 1MHz
8
6 1000
4
2
0
0 25 50 75 100 125
Case Temperature (0C)
Forward Current Derating Curve
150
100
0
5 10 15 20 25
Reverse Voltage (V)
Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2 Jun, 2014 - Rev. 1.1

विन्यास 3 पेज
डाउनलोड[ WSB20L100T Datasheet.PDF ]


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