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WSB20100TF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Schottky Barrier Diode - WillSEMI

भाग संख्या WSB20100TF
समारोह Schottky Barrier Diode
मैन्युफैक्चरर्स WillSEMI 
लोगो WillSEMI लोगो 
पूर्व दर्शन
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<?=WSB20100TF?> डेटा पत्रक पीडीएफ

WSB20100TF pdf
WSB20100T/WSB20100TF
Note 1
Note 2
Note 3
: Pulse Width=8.3msSingle Sine Pulse
: WLSI=Willsemi; 100T= Device code;20=Special Code; Y=Year; W=Week (A~z)
: WLSI=Willsemi; 20100= Device code; TF=Special Code; Y=Year; W=Week (A~z)
Electronics characteristics (TA=25oC, Per diode)
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Junction capacitance
Symbol
VR
VF
IR
CJ
Condition
IR=0.5mA
IF=10A
VR=100V
VR=25V, F=1MHz
Min.
100
-
-
Typ.
110
Max.
0.85
0.1
Unit
V
V
mA
pF
Typical characteristics (Ta=25oC, Per diode)
10
1500C
1250C
1 850C
250C
00C
0.1 -500C
0.01
1E-3
0.0
0.2 0.4 0.6 0.8
Forward Voltage (V)
Forward voltage vs. Forward current
1.0
T=150oC
0.01
1E-3
T=125oC
T=85oC
1E-4
1E-5 T=25oC
1E-6
1E-7 T=0oC
1E-8 T=-50oC
1E-9
0
20 40 60 80
Reverse Voltage (V)
100
Reverse current vs. Reverse voltage
10
WSB20100T
WSB20100TF
8
6
4
2
0
0 30 60 90 120 150 180
Case Temperature (0C)
Forward Current Derating Curve
F=1MHZ
1000
100
10
0 5 10 15 20 25
Reverse Voltage (V)
Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2 2014/9/2 – Rev. 1.1

विन्यास 3 पेज
डाउनलोड[ WSB20100TF Datasheet.PDF ]


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WSB20100TSchottky Barrier DiodeWillSEMI
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