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ZABG6004 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 6 STAGE FET LNA BIAS CONTROLLER - Diodes

भाग संख्या ZABG6004
समारोह 6 STAGE FET LNA BIAS CONTROLLER
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ZABG6004 pdf
ZABG6004
Device Description
The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs with
a minimum of external components whilst operating from a minimal voltage supply and using minimal current.
The ZABG6004 has six FET bias stages that can be programmed to provide a constant drain current. Programming of the FET bias stage
arrangement and the operating currents of each FET group is achieved by resistors connected to the RCAL1 and RCAL2 pins, allowing input FETs
to be biased for optimum noise and the later stages for optimum gain. All FET groups can be operated at currents in the range 4mA to 15mA,
RCAL1 sets the drain current for D1 and D4 and RCAL2 sets the drain current for D2, D3, D5 and D6. It is not recommended to connect RCAL1 and
RCAL2 together.
Drain voltages of amplifier stages are set at 2.0V and are current limited to approximately current set by their associated RCAL resistors.
Depletion mode FETs require a negative voltage bias supply when operated in grounded source circuits. The ZABG6004 includes an integrated
switched capacitor DC-DC converter generating a regulated output of -2V to allow single supply operation. The ZABG6004 has been designed to
be used with supply rails of 2.1V to 5.0V and the VDD range has been extended to 5.5V to allow for 10% supply variation.
It is possible to use less than the full complement of FET bias controls, unused drain and gate connections can be left open circuit without
affecting operation of the remaining bias circuits.
To protect the external FETs the circuits have been designed to ensure that, under any conditions including power up/down transients, the gate
drive from the bias circuits cannot exceed -2.5V. Additionally each stage has its own individual current limiter. Furthermore if the negative rail
experiences a fault condition, such as overload or short circuit, the drain supply to the FETs will be limited, avoiding excessive current flow.
The ZABG6004 is available in the U-QFN3030-16 (Type B) package.
Device operating temperature is -40°C to +105°C to suit a wide range of environmental conditions.
ZABG6004
Document number: DS38917 Rev. 1 - 2
2 of 9
www.diodes.com
December 2016
© Diodes Incorporated

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