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DMJT9435 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP SURFACE MOUNT TRANSISTOR - Diodes

भाग संख्या DMJT9435
समारोह PNP SURFACE MOUNT TRANSISTOR
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMJT9435 pdf
DMJT9435
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Symbol
V(BR)CEO
V(BR)EBO
ICER
Min
-30
-6
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
IEBO
hFE
VCE(SAT)
RCE(SAT)
VBE(SAT)
VBE(ON)
125
110
90
Transition Frequency
fT
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Cobo
Cibo
ton
td
tr
toff
ts
tf
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Typ
-100
-250
83
160
45
140
200
90
110
155
100
55
2.0 1.0
Max
-20
-200
-10
-210
-275
-550
183
-1.25
-1.1
150
Unit Test Conditions
V IC = -10mA
V IE = -50μA
μA VCB = -25V, RBE = 200
μA
VCB = -25V, RBE = 200,
TA = 125°C
μA VEB = -5V, IC = 0
VCE = -1V, IC = -0.8A
VCE = -1V, IC = -1.2A
VCE = -1V, IC = -3A
IC = -0.8A, IB = -20mA
mV IC = -1.2A, IB = -20mA
IC = -3A, IB = -300mA
mΩ IC = -3.0A, IB = -300mA
V IC = -3A, IB = -300mA
V VCE = -4V, IC = -1.2A
MHz
pF
pF
VCE = -10V, IC = -100mA,
f = 100MHz
VCB = -10V, f = 1MHz
VEB = -8V, f = 1MHz
ns
ns VCC = -15V, IC = -1.2A,
ns IB1 = -20mA
ns
ns VCC = -15V, IC = -1.2A,
ns IB1 = IB2 = -20mA
1.6
1.2
Note 4
0.8
0.4 Note 3
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
0.8 IB = -5mA
IB = -4mA
0.6
IB = -3mA
0.4
IB = -2mA
0.2
IB = -1mA
0
0 4 8 12 16 20
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DMJT9435
Document number: DS31622 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated

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भाग संख्याविवरणविनिर्माण
DMJT9435PNP SURFACE MOUNT TRANSISTORDiodes
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