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ZXTN2010Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Transistor - Diodes

भाग संख्या ZXTN2010Z
समारोह NPN Transistor
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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ZXTN2010Z pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IB
IC
ICM
ZXTN2010Z
Value
150
60
7
2
5
20
Unit
V
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Linear Derating Factor
Power Dissipation (Note 7)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
RθJL
TJ, TSTG
Value
1.5
12
2.1
16.8
83
60
3.23
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
≥ 4,000
≥ 400
Unit
V
V
JEDEC Class
3A
C
Notes:
6. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN2010Z
Document number: DS33661 Rev. 5 - 2
2 of 7
www.diodes.com
September 2018
© Diodes Incorporated

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