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DMN3032LFDBQ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN3032LFDBQ
समारोह DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN3032LFDBQ pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
TA = +25°C
TA = +75°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMN3032LFDBQ
Value
30
±20
6.2
5.0
2
25
12
10
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1.0
127
75
1.7
72
43
9
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +150°C (Note 10)
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
30
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
- 1.0
- 100
- ±100
1.5 2.0
25 30
30 42
0.75 1.2
500 -
52 -
44 -
2.3 -
5.0 -
10.6 -
1.3 -
1.8 -
2.2 -
2.6 -
9.7 -
2.0 -
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.8A
V VGS = 0V, IS = 1A
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 15V, ID = 5.8A
nC
ns
ns VDD = 15V, VGS = 10V,
ns RL = 2.6Ω, RG = 3Ω
ns
DMN3032LFDBQ
Document number: DS37981 Rev. 2 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated

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