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DMN3016LDV डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN3016LDV
समारोह DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN3016LDV pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V (Note 7)
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (380μs pulse, Duty cycle = 1%)
Avalanche Current (L = 0.1mH) (Note 8)
Avalanche Energy (L = 0.1mH) (Note 8)
Steady
State
TC = +25°C
TC = +70°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
DMN3016LDV
Value
30
±20
21
17
70
22
24
Unit
V
V
A
A
A
A
mJ
Value
0.9
134
78
1.8
70
41
15
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
30
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
9.5
14
0.70
1184
137
107
3.0
9.5
21
3.8
4.1
4.5
3.3
14
3.6
9.3
2.5
Max
-
1
±100
2.0
12
17
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 7A
VGS = 4.5V, ID = 7A
V VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = 15V, ID = 12A
ns
VDD = 15V, VGS = 10V,
RL = 1.5Ω, RG = 3Ω
ns
nC
IF = 12A, di/dt = 500A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
DMN3016LDV
Document number: DS38744 Rev. 2 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated

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