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DMN2005UPS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN2005UPS
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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DMN2005UPS pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Maximum Continuous Body Diode Forward Current (Mounted on Infinite Heatsink)
Avalanche Current (Note 7) L=0.2mH
Avalanche Energy (Note 7) L=0.2mH
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
DMN2005UPS
Value
20
±12
20
15
100
88
150
150
36
133
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1.5
98
83
3.0
51
43
1.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
20
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
0.4
Typ Max
——
1
±100
0.7
0.8
5337
560
505
0.7
60
142
7
11
12.4
29.8
117
52
17.8
8.6
1.2
4.6
8.7
1.1
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 20V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 4.5V, ID = 13.5A
VGS = 2.5V, ID = 13.5A
V VGS = 0V, IS = 27A
pF
pF VDS = 10V, VGS = 0V,
f = 1MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 16V, ID = 27A
nC
ns
ns VGS = 5V, VDS = 10V,
ns RG = 4.7Ω, ID = 13.5A
ns
ns IF = 13.5A, di/dt = 100A/μs
nC IF = 13.5A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMN2005UPS
Document number: DS37844 Rev. 2 - 2
2 of 7
www.diodes.com
August 2015
© Diodes Incorporated

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