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DMN10H220LQ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 100V N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN10H220LQ
समारोह 100V N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
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DMN10H220LQ pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
(Note 7)
(Note 6)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
TA = +25C
TA = +70C
TA = +25C
TA = +70C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
DMN10H220LQ
Value
100
±16
1.6
1.3
1.4
1.1
0.6
8
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
(Note 6)
(Note 7)
Symbol
PD
RθJA
TJ, TSTG
Value
1.3
0.8
94
177
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
100
1
Typ Max Unit
Test Condition
— — V VGS = 0V, ID = 250μA
1 μA VDS = 100V, VGS = 0V
±100 nA VGS = ±16V, VDS = 0V
2.5 V VDS = VGS, ID = 250μA
220 mΩ VGS = 10V, ID = 1.6A
250 VGS = 4.5V, ID = 1.3A
0.7 1.2
V VGS = 0V, IS = 1.1A
401
22
17
pF
VDS = 25V, VGS = 0V
f = 1MHz
2.1
VDS = 0V, VGS = 0V, f = 1MHz
4.1
8.3
1.5 nC VDS = 50V, ID = 1.6A
2
6.8
8.2
7.9
ns
VDS = 50V, VGS = 4.5V,
RG = 6.8Ω,ID = 1A
3.6
17
9.8
ns
nC
IF = 1.1A, di/dt =100A/μs
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
2 of 7
www.diodes.com
November 2016
© Diodes Incorporated

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