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DMJ70H1D3SJ3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMJ70H1D3SJ3
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMJ70H1D3SJ3 pdf
DMJ70H1D3SJ3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Peak Diode Recovery dv/dt (Note 7)
TC = +25°C
TC = +100°C
L = 60mH
L = 60mH
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
dv/dt
Value
700
±30
4.6
2.9
3.0
5.4
1.1
40
5
Units
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RΘJA
RΘJC
TJ, TSTG
Value
41
16
79
3.0
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Time (TJ = +150°C)
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Charge (TJ = +150°C)
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
tRR
QRR
QRR
Min
700
2






Typ
2.9
1.0
0.9
351
66
1.1
3.5
13.9
1.9
8.5
8.5
11.6
24.5
10
212
251
1.8
2.3
Max
1
100
4
1.3
1.3






Unit
V
µA
nA
V
V
pF
nC
ns
ns
ns
µC
µC
Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5A
VGS = 0V, IS = 5A
VDS = 50V, f = 1MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 560V, ID = 5A,
VGS = 10V
VDD = 350V, VGS = 10V,
RG = 4.7, ID = 2.5A
IS = 5A, dI/dt = 100A/μs
DMJ70H1D3SJ3
Document number: DS37825 Rev. 4 - 2
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated

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