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FQU4N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQU4N60
समारोह 600V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQU4N60?> डेटा पत्रक पीडीएफ

FQU4N60 pdf
Package Marking and Ordering Information
Device Marking
FQU4N60
FQU4N60C
Device
FQU4N60TU
FQU4N60CTU
Package
IPAK
IPAK
Tape Size
Tape Width
Quantity
5040
5040
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
Conditions
VGS = 0V, ID = 250μA, TJ = 25°C
VGS = 0V, ID = 250μA, TJ = 150°C
ID = 250μA, Referenced to 25°C
Min
600
--
--
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID =2.6A
--
IDSS Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 1.3A
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
VDS = 40V, ID = 1.3A
VDS = 25V, VGS = 0V,
f = 1.0MHz
(Note 4)
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300V, ID = 3.4A
RG = 25Ω
VDS = 480V, ID = 3.4A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 2.6A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 3.4A
dIF/dt =100A/μs
(Note 4)
Notes:
1. Repetitive Ratin g: Pulse width limited by maximum junction temperature
2. IAS = 1.3, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 3.4, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ Max Units
--
650
0.38
-- V
-- V
-- V/°C
650 -- V
-- 1 μA
-- 10 μA
-- 100 nA
--
-100
nA
-- 5.0 V
1.0 1.2 Ω
2.6 -- S
415 540 pF
210 275 pF
19.5 -- pF
12 16 pF
32 -- pF
16
45
36
30
12.8
2.4
7.1
45
100
85
70
16.6
--
--
ns
ns
ns
ns
nC
nC
nC
--
--
--
277
2.07
2.6
11
1.4
--
--
A
A
V
ns
μC
FQU4N60 Rev. A
2 www.fairchildsemi.com

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