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CJL6602 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-channel and N-channel Complementary MOSFETS - JCET

भाग संख्या CJL6602
समारोह P-channel and N-channel Complementary MOSFETS
मैन्युफैक्चरर्स JCET 
लोगो JCET लोगो 
पूर्व दर्शन
1 Page
		
<?=CJL6602?> डेटा पत्रक पीडीएफ

CJL6602 pdf
MOSFET ELECTRICAL CHARACTERISTICS
N-channel MOSFET Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Static characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current (note1)
Drain-source on-resistance (note1)
Forward tranconductance (note1)
Gate threshold voltage
Diode forward voltage (note1)
Dynamic characteristics (note2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Switching Characteristics(note2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Symbol
Test Condition
V(BR) DSS
IDSS
IGSS
RDS(on)
gFS
VGS(th)
VSD
VGS = 0V, ID =250µA
VDS =24V,VGS = 0V
VGS =±12V, VDS = 0V
VGS =10V, ID =3A
VGS =4.5V, ID =3A
VGS =2.5V, ID =2A
VDS =5V, ID =3A
VDS =VGS, ID =250µA
IS=1A,VGS=0V
Ciss
Coss
Crss
Rg
VGS =0V,VDS =15V ,f =1MHz
VGS =0V,VDS =0V,f =1MHz
td(on)
tr
td(off)
tf
VGS=10V,VDS=15V,
RL=5,RGEN=6
Min Typ
30
45
50
60
5
0.6
390
54.5
41
3
4
2
22
3
Max
1
±100
60
75
115
1.4
1
Unit
V
µA
nA
m
m
m
S
V
V
pF
pF
pF
ns
ns
ns
ns
P-channel MOSFET Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage
V(BR) DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS VDS =-24V,VGS = 0V
Gate-source leakage current
IGSS VGS =±12V, VDS = 0V
VGS =-10V, ID =-2.3A
Drain-source on-resistance (note1)
RDS(on) VGS =-4.5V, ID =-2A
VGS =-2.5V, ID =-1A
Forward tranconductance (note1)
gFS VDS =-5V, ID =-2.3A
Gate threshold voltage
VGS(th)
VDS =VGS, ID =-250µA
Diode forward voltage (note1)
VDS IS=-1A,VGS=0V
Dynamic characteristics (note2)
Input capacitance
Ciss
Output capacitance
Coss VGS =0V,VDS =-15V,f =1MHz
Reverse transfer capacitance
Crss
Gate resistance
Rg VGS =0V,VDS =0V,f =1MHz
Switching Characteristics (note2)
Turn-on delay time
Turn-on rise time
td(on)
tr
VGS=-10V,VDS=-15V,
Turn-off delay time
td(off)
RL=6,RGEN=6
Turn-off fall time
tf
Notes : 1. Pulse Test : Pulse width300μs, duty cycle0.5%.
2. Guaranteed by design, not subject to production testing.
Min
-30
4.5
-0.6
Typ
75
95
140
409
55
42
12
13
10
28
13
Max Unit
-1
±100
135
185
265
-1.4
-1
V
µA
nA
m
m
m
S
V
V
pF
pF
pF
ns
ns
ns
ns
www.cj-elec.com
2
A,Oct,2015

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