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UT61256C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 32K x 8 BIT HIGH SPEED CMOS SRAM - UTRON

भाग संख्या UT61256C
समारोह 32K x 8 BIT HIGH SPEED CMOS SRAM
मैन्युफैक्चरर्स UTRON 
लोगो UTRON लोगो 
पूर्व दर्शन
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<?=UT61256C?> डेटा पत्रक पीडीएफ

UT61256C pdf
UTRON
Rev. 1.2
ABSOLUTE MAXIMUM RATINGS*
UT61256C
32K X 8 BIT HIGH SPEED CMOS SRAM
PARAMETER
Terminal Voltage with Respect to Vss
Operating Temperature
SYMBOL
VTERM
TA
RATING
-0.5 to +6.5
0 to +70
UNIT
V
Storage Temperature
TSTG
-65 to +150
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
PD
IOUT
Tsolder
1
50
260
W
mA
*Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may
affect device reliability.
TRUTH TABLE
MODE
CE
Standby
H
Output Disable
L
Read
L
Write
L
Note: H = VIH, L=VIL, X = Don't care.
OE
X
H
L
X
WE
X
H
H
L
I/O OPERATION
High - Z
High - Z
DOUT
DIN
SUPPLY CURRENT
ISB,ISB1
ICC
ICC
ICC
DC ELECTRICAL CHARACTERISTICS (VCC = 5V± 10%, TA = 0to 70)
PARAMETER
SYMBOL TEST CONDITION
Input High Voltage
VIH
Input Low Voltage
VIL
Input Leakage Current
ILI VSS VIN VCC
Output Leakage Current
ILO
VSS VI/O VCC
CE =VIH or OE =VIH or WE =VIL
Output High Voltage
Output Low Voltage
Operating Power
Supply Current
VOH IOH = - 4mA
VOL IOL = 8mA
ICC
Cycle time=Min.
CE = VIL , II/O = 0mA
-8
- 10
- 12
- 15
Standby Current (TTL)
ISB CE = VIH
Standby Current (CMOS) ISB1 CE VCC-0.2V
MIN.
2.2
- 0.5
-1
MAX.
VCC+0.5
0.8
1
UNIT
V
V
µA
- 1 1 µA
2.4 -
V
- 0.4 V
- 190 mA
- 180 mA
- 160 mA
- 140 mA
- 30 mA
- 5 mA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
P80031

विन्यास 10 पेज
डाउनलोड[ UT61256C Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

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