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APTJC120AM25VCT1AG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SiC Power Module - Microsemi

भाग संख्या APTJC120AM25VCT1AG
समारोह SiC Power Module
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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APTJC120AM25VCT1AG pdf
APTJC120AM25VCT1AG
Electrical Characteristics
Symbol Characteristic
Test Conditions
VDSX
Drain-Source & Drain-Gate Blocking
Voltage
VGS 0V, ID < IDSS
Min Typ Max Unit
1200
V
IGL Total Gate-Source Leakage
VGS > -15 V, VDS = 0 V
2.4 mA
IDSS Off -State Drain Current
VGS -5 V, VDS = 1200 V
1.6 mA
RDS(on) Drain-Source On-state Resistance
VGS = 2.5V, ID = 20 A
25 mΩ
RG Internal Gate Resistance (per JFET) Drain-source shorted, f= 1MHz
1.5 Ω
Vth Threshold Voltage
VDS = 1V, IDS = 300 mA
0.75 1.00 1.25 V
ID Continuous Drain Current
Tc = 50°C, TJ=125°C
Tc = 80°C, TJ=125°C
50
A
37
PD Maximum Power Dissipation
180 W
SiC diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IR Reverse Leakage Current
IF(AV)
VF
Continuous Forward Current
Diode Forward Voltage
QC Total Capacitive Charge
C Total Capacitance
Test Conditions
Min Typ Max Unit
1200
V
VR = 1200 V
Tj = 25 °C
Tj = 175 °C
Tc < 145 °C
IF = 30 A
Tj = 25 °C
Tj = 175 °C
IF = 30 A, VR = 400 V
di/dt = 1500 A/µs
30
600
300
µA
30 A
1.6 1.8
2.4 2.9
V
120 nC
f = 100 kHz, VR = 1 V
f = 100 kHz, VR = 300 V
f = 100 kHz, VR = 600 V
2300
144
100
pF
Output resistance and capacitor characteristics
Symbol Characteristic
R3 Input impedance
R3tol Tolerance
PD3 Power dissipation
C3 Ceramic Capacitor value
C3tol Tolerance
Urdc3 Rated DC voltage
Min Typ Max Unit
4Ω
5%
5W
4.7 nF
10 %
1000
V
Input resistance and capacitor characteristics
Symbol Characteristic
Ri Input impedance
Ritol Tolerance
i=1, 2
PDi Power dissipation
Ci Ceramic Capacitor value
Citol Tolerance
i=1, 2
Urdci Rated DC voltage
Min Typ Max Unit
1Ω
5%
1W
15 nF
10 %
50 V
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APTJC120AM25VCT1AGSiC Power ModuleMicrosemi
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