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APTJC120AM13VCT1AG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SiC Power Module - Microsemi

भाग संख्या APTJC120AM13VCT1AG
समारोह SiC Power Module
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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APTJC120AM13VCT1AG pdf
APTJC120AM13VCT1AG
Electrical Characteristics
Symbol Characteristic
VDSX
Drain-Source & Drain-Gate Blocking
Voltage
Test Conditions
VGS 0V, ID < IDSS
Min Typ Max Unit
1200
V
IGL Total Gate-Source Leakage
VGS > -15 V, VDS = 0 V
2.4 mA
IDSS Off -State Drain Current
VGS -5 V, VDS = 1200 V
1.6 mA
RDS(on) Drain-Source On-state Resistance
VGS = 2.5V, ID = 40 A
13 m
RG Internal Gate Resistance (per JFET) Drain-source shorted, f= 1MHz
1.5
Vth Threshold Voltage
VDS = 1V, IDS = 300 mA
0.75 1.00 1.25 V
ID Continuous Drain Current
Tc = 50°C, TJ=125°C
Tc = 80°C, TJ=125°C
100
A
75
PD Maximum Power Dissipation
357 W
SiC diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM
IR
IF(AV)
VF
QC
Maximum Peak Repetitive Reverse Voltage
Reverse Leakage Current
Continuous Forward Current
Diode Forward Voltage
Total Capacitive Charge
VR = 1200 V
Tj = 25 °C
Tj = 175 °C
Tc < 145 °C
IF = 60 A
Tj = 25 °C
Tj = 175 °C
IF = 60 A, VR = 400 V
di/dt = 1000 A/µs
C Total Capacitance
f = 100 kHz, VR = 1 V
f = 100 kHz, VR = 300 V
f = 100 kHz, VR = 600 V
Output resistance and capacitor characteristics
Symbol Characteristic
R3 Input impedance
R3tol Tolerance
PD3 Power dissipation
C3 Ceramic Capacitor value
C3tol Tolerance
Urdc3 Rated DC voltage
Min
1200
Typ
60
1200
60
1.6
2.4
260
7380
304
212
Min Typ
4
5
5
4.7
10
1000
Max
600
2.9
Max
Unit
V
µA
A
V
nC
pF
Unit
%
W
nF
%
V
Input resistance and capacitor characteristics
Symbol Characteristic
Ri Input impedance
Ritol Tolerance
i=1, 2
PDi Power dissipation
Ci Ceramic Capacitor value
Citol Tolerance
i=1, 2
Urdci Rated DC voltage
Min Typ Max Unit
1
5%
1W
33 nF
10 %
50 V
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APTJC120AM13VCT1AGSiC Power ModuleMicrosemi
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