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PZ0703ETF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Field Effect Transistor - NIKO-SEM

भाग संख्या PZ0703ETF
समारोह P-Channel Field Effect Transistor
मैन्युफैक्चरर्स NIKO-SEM 
लोगो NIKO-SEM लोगो 
पूर्व दर्शन
1 Page
		
<?=PZ0703ETF?> डेटा पत्रक पीडीएफ

PZ0703ETF pdf
NIKO-SEM
P-Channel Enhancement
PZ0703ETF
Mode Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = -250A
VDS = VGS, ID = -250A
-30
-1 -1.6
-3
V
VDS = 0V, VGS = ±16V
±30 uA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
1
10 A
VGS = -4.5V, ID = -20A
VGS = -10V, ID = -20A
7.6 12
mΩ
5 7.5
VDS = -5V, ID = -20A
57 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -15V, f = 1MHz
4987
1095
Reverse Transfer Capacitance
Crss
1018
Gate resistance
Rg VGS=0V,VDS=0V, f=1MHz
2.4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -15V , VGS= -10V , ID =-20A
VDS = -15V,
ID -20A, VGS = -10V, RGS = 6Ω
128
15
34
32
24
90
44
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -20A, VGS = 0V
-31
-1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -20A, dlF/dt = 100A / S
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is -55A.
32
21
pF
Ω
nC
nS
A
V
nS
nC
REV1.0
H-1-3
2

विन्यास 4 पेज
डाउनलोड[ PZ0703ETF Datasheet.PDF ]


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