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PW567EA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या PW567EA
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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PW567EA pdf
PW567EA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±12V
-20
-0.4 -0.96 -1.2
±30
Zero Gate Voltage Drain Current
IDSS
VDS = -16V, VGS = 0V
VDS = -10V, VGS = 0V , TJ = 75 °C
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -450mA
VGS = -2.5V, ID = -100mA
VDS = -5V, ID = -450mA
500 520
770 800
1.6
DYNAMIC
Input Capacitance
Ciss
48
Output Capacitance
Coss
VGS = 0V, VDS = -10V, f = 1MHz
18
Reverse Transfer Capacitance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
td(on)
tr
td(off)
tf
VDD = -10V, ID @ -450mA
VGS = -4.5V,RGEN = 5.1Ω
10
17
30
76
46
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -450mA, VGS = 0V
-0.2
-1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -1A , dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
46
28
2Independent of operating temperature.
UNITS
V
mA
mA
S
pF
nS
A
V
nS
nC
Rev 1.0
2 2016/4/7

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डाउनलोड[ PW567EA Datasheet.PDF ]


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