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PZ5D8EA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या PZ5D8EA
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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PZ5D8EA pdf
PZ5D8EA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±10V
20
0.4 0.63 1
±30
V
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 1.8V, ID = 0.2A
VGS = 2.5V, ID = 0.25A
VGS = 4.5V, ID = 0.5A
VDS = 5V, ID = 0.5A
300 700
226 400
177 300
5S
DYNAMIC
Input Capacitance
Ciss
60
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz 19 pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 20V,
ID = 1A, VGS = 4.5V
VDD = 10V, ID @ 0.5A,
VGS = 4.5V, RGEN = 5.1Ω
10
1.4
0.1 nC
0.3
17
36
nS
86
173
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 0.5A, VGS = 0V
0.3 A
1.2 V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
IF = 1A, dl/dt = 100A /mS
111 nS
102 uC
2Independent of operating temperature.
REV 1.0
2 2016/7/12

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