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P1650GTF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P1650GTF
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P1650GTF pdf
P1650GTF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
500
2 2.7
4
V
±100 nA
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 500V, VGS = 0V , TC = 25 °C
VDS = 400V, VGS = 0V , TC = 100 °
C
VGS = 10V, ID = 8A
VDS = 10V, ID = 8A
1
100
296 360
16
mA
S
DYNAMIC
Input Capacitance
Ciss
2707
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
236
pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 400V,VGS = 10V,
ID = 16A
VDD = 250V,
ID @ 16A, RG = 25Ω
17
59
17 nC
18
45
180
nS
130
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 16A, VGS = 0V
16 A
1V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
IF = 16A , dIF/dt= 100A/ms
376 nS
5.2 uC
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REV 1.0
2 2017/1/19

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डाउनलोड[ P1650GTF Datasheet.PDF ]


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