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P1615ATFA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P1615ATFA
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P1615ATFA pdf
P1615ATFA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 125 °C
150
2.5
3.5 4.5
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 7V, ID = 20A
VGS = 10V, ID = 20A
13.5 18.5
12.5 16.5
Forward Transconductance1
gfs
VDS = 10V, ID = 20A
37 S
DYNAMIC
Input Capacitance
Ciss
3426
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
523
Reverse Transfer Capacitance
Crss
198
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 75V,VGS = 10V,
ID = 20A
78
17
28
Turn-On Delay Time2
td(on)
30
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 75V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
73
66
Fall Time2
tf
83
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A , dIF/dt= 100A/ms
83
236
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
42
1.2
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2017/1/19

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डाउनलोड[ P1615ATFA Datasheet.PDF ]


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