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CJQ05N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N-channel MOSFET - JCET

भाग संख्या CJQ05N10
समारोह Dual N-channel MOSFET
मैन्युफैक्चरर्स JCET 
लोगो JCET लोगो 
पूर्व दर्शन
1 Page
		
<?=CJQ05N10?> डेटा पत्रक पीडीएफ

CJQ05N10 pdf
026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =100V,VGS = 0V
Gate-body leakage current
IGSS VGS =±20V, VDS = 0V
Gate threshold voltage (note 3)
Drain-source on-resistance (note 3)
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =10V, ID =5A
Forward transconductance (note 3)
Diode forward voltage (note 3)
gFS VDS =5V, ID =2.9A
VSD IS=5A, VGS = 0V
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VGS=10V,VDS=30V,
RGEN=2.5, ID =2A, RL=15
Turn-off fall time
tf
Total gate charge
Gate-source Charge
Gate-drain Charge
Qg
Qgs VDS =30V,VGS =10V,ID =3A
Qgd
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t10s.
3. Pulse Test : Pulse Width300µs, Duty Cycle2%.
4. Guaranteed by design, not subject to producting.
Min Typ Max Unit
100 V
1 µA
±100 nA
1 1.8 2 V
103 140 m
8S
1.2 V
690 pF
120 pF
90 pF
11 ns
7.4 ns
35 ns
9.1 ns
15.5 nC
3.2 nC
4.7 nC
ZZZFMHOHFFRP
 D,Mar,2016

विन्यास 5 पेज
डाउनलोड[ CJQ05N10 Datasheet.PDF ]


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