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P1615ATA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P1615ATA
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P1615ATA?> डेटा पत्रक पीडीएफ

P1615ATA pdf
P1615ATA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
150
2.5 3.5 4.5
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 20A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
14 18.5
13 16.5
34 S
DYNAMIC
Input Capacitance
Ciss
3452
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
530 pF
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDS = 75V, ID = 20A, VGS = 10V
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 75V, ID @ 20A,
VGS = 10V, RGEN =6Ω
Fall Time2
tf
209
1.4 Ω
80
17 nC
28
23
56
nS
55
67
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A, VGS = 0V
68 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dls/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
80 nS
225 nC
2Independent of operating temperature.
REV 1.0
2 2017/1/13

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डाउनलोड[ P1615ATA Datasheet.PDF ]


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