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P1604ET डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P1604ET
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P1604ET?> डेटा पत्रक पीडीएफ

P1604ET pdf
P1604ET
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-40
-1.5 -2.2
-3
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 70 °C
VDS = -5V, VGS = -10V
-120
1
mA
10
A
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1
gfs
VGS = -10V, ID = -25A
VGS = -7V, ID = -15A
VDS = -10V, ID = -25A
12 16
14 20
29 S
DYNAMIC
Input Capacitance
Ciss
2229
Output Capacitance
Coss
VGS = 0V, VDS = -15V, f = 1MHz
334 pF
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS,
ID = -25A, VGS = -10V
VDS = 0.5V(BR)DSS, ID @ -25A,
VGS = -10V, RGEN = 6Ω
293
4.3 Ω
48
9 nC
15
15
43
nS
62
50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
Forward Voltage1
IS
VSD IF = -25A, VGS = 0V
-65 A
-1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -25A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
27 nS
16 nC
2Independent of operating temperature.
REV 1.0
2 2014/7/21

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डाउनलोड[ P1604ET Datasheet.PDF ]


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