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P1604ED डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P1604ED
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P1604ED?> डेटा पत्रक पीडीएफ

P1604ED pdf
P1604ED
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-40
-1.5 -2.2 -3.0
±100
1
10
-130
Drain-Source On-State
Resistance1
RDS(ON)
VGS = -7V, ID = -15A
VGS = -10V, ID = -25A
16 20
13 16
Forward Transconductance1
gfs
VDS = -5V, ID = -25A
24
DYNAMIC
Input Capacitance
Ciss
2350
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
480
Reverse Transfer Capacitance
Crss
310
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
4.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -25A
42
9
10
Turn-On Delay Time2
td(on)
15
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -20V,
ID @ -1A, VGS = -10V, RGS = 6Ω
43
62
Fall Time2
tf
50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -25A, VGS = 0V
Reverse Recovery Time
trr IF = -20A, dlF/dt = 100A / mS
43
Reverse Recovery Charge
Qrr
31
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-43
-1.3
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-20

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