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P3304QV डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N & P-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P3304QV
समारोह N & P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P3304QV pdf
P3304QV
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJL
RqJA
TYPICAL
48
MAXIMUM UNITS
31
°C / W
62.5
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH. UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
N 40
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
P -40
V
N 1.0 2.0 3.0
VDS = VGS, ID = -250mA
P -1.0 -2.0 -3.0
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
N
P
±100
nA
±100
VDS = 32V, VGS = 0V
N
1
VDS = -32V, VGS = 0V
VDS =30V, VGS = 0V, TJ = 55 °C
P
N
-1
mA
10
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = -30V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
VDS = -5V, VGS = -10V
VGS = 5V, ID = 6A
VGS = -5V, ID = -5A
VGS = 10V, ID = 7A
VGS = -10V, ID = -7A
VDS = 10V, ID = 7A
VDS = -10V, ID = -7A
P
N
P
N
P
N
P
N
P
-10
20
A
-20
30 42
44 50
21 28
28 33
19
S
18
REV 1.0
2 2014/9/29

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डाउनलोड[ P3304QV Datasheet.PDF ]


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P3304QVN & P-Channel Enhancement Mode MOSFETUNIKC
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