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P2503NVG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N & P-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P2503NVG
समारोह N & P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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P2503NVG pdf
P2503NVG
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Device
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3
RqJA
N-ch
P-ch
63
°C / W
70
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH. UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
N 30
P -30
V
N 1 1.5 2.5
P -1 -1.5 -2.5
N ±100
nA
P ±100
Zero Gate Voltage Drain
Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
ID(ON)
RDS(ON)
gfs
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 55 °C
VDS = -20V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
VDS = -5V, VGS = -10V
VGS = 4.5V, ID = 6A
VGS = -4.5V, ID = -4A
VGS = 10V, ID = 7A
VGS = -10V, ID = -5A
VDS = 5V, ID = 7A
VDS = -5V, ID = -5A
N
P
N
P
N
P
N
P
N
P
N
P
1
-1
mA
10
-10
30
A
-30
25 37
58 80
18 25
34 45
19
S
11
REV 1.0
2 2014/9/19

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