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P1606BD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P1606BD
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P1606BD?> डेटा पत्रक पीडीएफ

P1606BD pdf
P1606BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
1 1.5 3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
On-State Drain Current1
Forward Transconductance1
RDS(ON)
ID(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 5V,VGS = 10V
VDS = 10V, ID = 20A
17 21
13 18.5
110
45
DYNAMIC
Input Capacitance
Ciss
2710
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
178
Reverse Transfer Capacitance
Crss
136
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0V,VGS = 0V ,f=1MHz
VDS = 30V, ID = 20A, VGS = 10V
VDD = 30V, ID @ 20A,
VGS = 10V , RGEN =6Ω
2
55
9.9
12.5
31
99
75
50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
42
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
32
35
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-20

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डाउनलोड[ P1606BD Datasheet.PDF ]


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